Low bandgap GaInAsSbP pentanary thermophotovoltaic diodesCHEETHAM, K. J; CARRINGTON, P. J; COOK, N. B et al.Solar energy materials and solar cells. 2011, Vol 95, Num 2, pp 534-537, issn 0927-0248, 4 p.Article

An optical micro-magnetic displayPARK, Jae-Hyuk; KIM, J. H; CHO, J. K et al.Journal of magnetism and magnetic materials. 2004, Vol 272-76, pp 2260-2262, issn 0304-8853, 3 p., 3Conference Paper

Phenomenological approach in modeling of thin film nucleation from the liquid phaseSAKALO, T. V; KUKUSHKIN, S. A.Applied surface science. 1996, Vol 92, Num 1-4, pp 261-266, issn 0169-4332Conference Paper

Ultrahigh purity liquid phase epitaxial growth of GaAsAMANO, T; KONDO, S; NAGAI, H et al.Japanese journal of applied physics. 1993, Vol 32, Num 9A, pp 3692-3699, issn 0021-4922, 1Article

Characterization of liquid-phase epitaxially grown HgCdTe films by magnetoresistance measurementsKIM, J. S; SEILER, D. G; COLOMBO, L et al.Journal of electronic materials. 1995, Vol 24, Num 9, pp 1305-1310, issn 0361-5235Conference Paper

Characterization of photodiodes, made from a p-type epitaxial layer grown on n-type InSb <1 1 1> by LPE methodSAREMINIA, Gh; HAJIAN, M; SIMCHI, H et al.Infrared physics & technology. 2010, Vol 53, Num 5, pp 315-319, issn 1350-4495, 5 p.Article

Early growth stages of Ge_0.85Si_0.15 on Si(001) from Bi solutionDORSCH, W; CHRISTIANSEN, S; ALBRECHT, M et al.Surface science. 1995, Vol 331-333, pp 896-901, issn 0039-6028, bConference Paper

Liquid phase electroepitaxy of III-V semiconductorsGOLUBEV, L. V; EGOROV, A. V; NOVIKOV, S. V et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 277-282, issn 0022-0248Conference Paper

A new substrate holder for liquid phase epitaxy growth of Hg_1-xCd_xTe from Hg-rich solutionsCHAVADA, F. R; GARG, A. K; SHIV KUMAR et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 28, Num 1-3, pp 36-38, issn 0921-5107Conference Paper

Sulphur incorporation in GaSb layers grown by liquid phase electroepitaxyNOVAK, J; KLAUS, M; BENZ, K. W et al.Journal of crystal growth. 1994, Vol 139, Num 3-4, pp 206-210, issn 0022-0248Article

Minority carrier diffusion lengths for high purity liquid phase epitaxial GaAsBUTCHER, K. S. A; ALEXIEV, D; TANSLEY, T. L et al.Australian journal of physics. 1993, Vol 46, Num 2, pp 317-325, issn 0004-9506Article

Status of Te-rich and Hg-rich liquid phase epitaxial technologies for the growth of (Hg,Cd)Te alloysVYDYANATH, H. R.Journal of electronic materials. 1995, Vol 24, Num 9, pp 1275-1285, issn 0361-5235Conference Paper

Microwave/Millimeter-Wave Garnet FilmsHUAIWU ZHANG; QINGHUI YANG; FEIMING BAI et al.IEEE transactions on magnetics. 2011, Vol 47, Num 2, pp 295-299, issn 0018-9464, 5 p., 1Conference Paper

Research on Phase Detection on Two-Dimensional Position Sensitive DetectorFENG XI; LAN QIN; LIAN XUE et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7658, issn 0277-786X, isbn 978-0-8194-8088-0, 76581D.1-76581D.5, 2Conference Paper

Liquid-phase epitaxy of graded Pb_1-xSn_xTe layersZHOVNIR, G. I; TSARENKO, O. N; RYABETS, S. I et al.Inorganic materials. 1996, Vol 32, Num 6, pp 606-608, issn 0020-1685Article

A theorical approach to the In_1-xGa_xP LPE growth by computer simulation techniqueDIZAJI, H. R; DHANASEKARAN, R.Physica status solidi. A. Applied research. 1996, Vol 156, Num 1, pp 71-79, issn 0031-8965Article

Characterization of praseodymium-doped InP epilayers grown by liquid-phase epitaxyJIANG, G.-C.Japanese journal of applied physics. 1996, Vol 35, Num 4A, pp 2020-2024, issn 0021-4922, 1Article

Atomic scale mechanisms of epitaxial growthSTRINGFELLOW, G. B; NISHINAGA, T.Journal of crystal growth. 1996, Vol 163, Num 1-2, issn 0022-0248, 200 p.Conference Proceedings

Raman scattering study of the immiscible region in InGaAsP grown by LPE on (100) and (111) GaAsSUGIURA, T; HASE, N; HIRAMATSU, K et al.Journal of electronic materials. 1996, Vol 25, Num 4, pp 695-699, issn 0361-5235Conference Paper

PbTiO₃ films grown by the liquid phase epitaxy methodMORIKOSHI, H; UCHIDA, N; NAKATA, A et al.Japanese journal of applied physics. 1996, Vol 35, Num 9B, pp 4991-4994, issn 0021-4922, 1Conference Paper

Electrical properties of praseodymium-doped GaAs and Al_0.3Ga_0.7As epilayersLAI, M. Z; CHANG, L. B; CHEN, C. C et al.Crystal research and technology (1979). 1995, Vol 30, Num 3, pp 433-439, issn 0232-1300Article

Liquid phase epitaxy of silicon on multicrystalline silicon substratesWEBER, K. J; BLAKERS, A. W.Journal of crystal growth. 1995, Vol 154, Num 1-2, pp 54-59, issn 0022-0248Article

The growth and properties of liquid phase epitaxial silicon in a forming gas ambientSHI, Z; ZHANG, W; ZHENG, G. F et al.Journal of crystal growth. 1995, Vol 151, Num 3-4, pp 278-284, issn 0022-0248Article

Growth of GaAs and (Ge2)x(GaAs)1-x on Si using ultrafast cooling of the growth solutionABRAMOV, A. V; DERYAGIN, N. G; TRET'YAKOV, D. N et al.Semiconductor science and technology. 1994, Vol 9, Num 10, pp 1815-1822, issn 0268-1242Article

Thermal-stress-induced dislocations in GeSi/Si heterostructuresROOS, B; ERNST, F.Journal of crystal growth. 1994, Vol 137, Num 3-4, pp 457-471, issn 0022-0248Article